Perovskite transition metal oxide LaMnO3 is an anti-ferromagnetic insulator. But, alkaline-earth-ion-doped, i.e., Sr doped LaMnO3 (La0.7Sr0.3MnO3) is a ferromagnetic metal at room temperature. The ferromagnetism in La0.7Sr0.3MnO3 (LSMO) can be understood by the double exchange mechanism. Mixed valence (Mn3+/Mn4+) manganite LSMO undergoes metal-to-insulator transition at the temperature close to the ferromagnetic to paramagnetic transition. It is widely known for its colossal magnetoresistance, half metallicity, high Curie temperature, as an electrode material for magnetic tunneling junctions, and almost 100% spin polarization. Thin films of LSMO show completely insulating behavior below a certain thickness called “dead layer”. The thin films of LSMO exhibit both electric and magnetic “dead layer”. The physical behavior of LSMO thin-film strongly depends on grain size, thickness, substrate-induced strain, substrate temperature, and oxygen stoichiometry. The surface and interfacial properties of the LSMO thin films and heterostructures are different from the bulk. On the other hand, zinc oxide (ZnO) crystallizes in wurtzite structure is a well-known wide band gap semiconductor. It has large free-exciton binding energy (60 meV) and a direct band gap (3.3 eV) at room temperature. It is grown n-type because of oxygen deficiency. It is widely used in UV lasers, solar cells, and light emitting diodes. The band gap of ZnO thin film depends on crystallite size, substrate induced strain, annealing temperature, and thickness of the film. My proposed research is to synthesize the Si/LSMO, Si/ZnO thin films and Si/LSMO/ZnO heterostructures and to address the scope to review the basic understanding in the physics of interface based on artificial heterostructures property studies. I will present some of my proposed research, “Spin pinned at the bottom interface of Si/La0.7Sr0.3MnO3/ZnO: depinning by the top interface” published in Appl. Phys. Lett. 115, 222401 (2019); https://doi.org/10.1063/1.5115809.