The future of Integrated Circuits (ICs) relies on developing smaller, lighter, and smarter energy-efficient electronic devices, surpassing the limits of silicon-based technology. Traditional materials face constraints in further scaling devices. To address this, the IC industry is actively exploring novel multifunctional materials and device architectures. Two-dimensional layered materials, such as hexagonal boron nitride (h-BN), offer a promising solution. Chemical Vapor Deposition (CVD) is a key method for mass-producing 2D materials, with h-BN being of particular interest due to its insulating properties. While h-BN growth on metal substrates has been successful, limited reports exist on growing high-quality thick h-BN films. Our research focuses on understanding the growth process of high-quality thick h-BN. Successful growth has been achieved on copper, Si, and SiO2 substrates, and the electrical properties of the as-grown h-BN have been studied. Additionally, we have integrated the as-grown h-BN into memristive devices, demonstrating potential for both volatile and non-volatile switching.